2sK4087LS no. a0555-1/5 features low on-resistance, low input capacitance, ultrahigh-speed switching. high reliability (adoption of hvp process). attachment workability is good by mica-less package. a valanche resistance guarantee. specifications absolute maximum ratings at t a=25 c parameter symbol conditions ratings unit drain-to-source v oltage v dss 600 v gate-to-source v oltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature 14 a i dpack *2 sanyo s ideal heat dissipation condition 9.2 a drain current (pulse) i dp pw 10 s, duty cycle 1% 52 a allowable power dissipation p d 2.0 w t c=25 c (sanyo s ideal heat dissipation condition) 40 w channel t emperature t c h 150 c storage t emperature t stg - -55 to +150 c a valanche energy (single pulse) *3 e as 11 7 m j a valanche current *4 i av 14 a * 1 shows chip capability * 2 package limited * 3 v dd =99v , l=1mh, i av =14a * 4 l 1mh, single pulse marking : k4087 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0555a specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 40407qb ti im tc-00000630 / 22107qb ti im tc-00000371 sany o semiconductor s d ata sheet 2sK4087LS n-channel silicon mosfet general-purpose switching device applications http://
2sK4087LS no. a0555-2/5 electrical characteristics at t a=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown v oltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate v oltage drain current i dss v ds =480v , v gs =0v 100 a gate-to-source leakage current i gss v gs = 30v , v ds =0v 100 na cutof f v oltage v gs (of f) v ds =10v , i d =1ma 3 5 v forward t ransfer admittance ? yfs ? v ds =10v , i d =7a 4 8 s static drain-to-source on-state resistance r ds (on) i d =7a, v gs =10v 0.47 0.61 ? input capacitance ciss v ds =30v , f=1mhz 1200 pf output capacitance coss v ds =30v , f=1mhz 220 pf reverse t ransfer capacitance crss v ds =30v , f=1mhz 50 pf t urn-on delay t ime t d (on) see specified t est circuit. 27 ns rise t ime t r see specified t est circuit. 72 ns t urn-off delay t ime t d (of f) see specified t est circuit. 144 ns fall t ime t f see specified t est circuit. 48 ns t otal gate charge qg v ds =200v , v gs =10v , i d =14a 46 nc gate-to-source charge qgs v ds =200v , v gs =10v , i d =14a 8.6 nc gate-to-drain ?iller?charge qgd v ds =200v , v gs =10v , i d =14a 26.4 nc diode forward v oltage v sd i s =14a, v gs =0v 0.95 1.3 v package dimensions unit : mm (typ) 7509-002 switching t ime t est circuit a valanche resistance t est circuit 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 12 3 10.0 3.2 1 : gate 2 : drain 3 : source sanyo : to-220fi(ls) pw=10 s d. c . 0.5% p. g r gs =50 ? g s d i d =7a r l =28.6 ? v dd =200v v out 2sK4087LS v in 10v 0v v in 50 ? 50 ? rg v dd l 10v 0v 2sK4087LS
2sK4087LS no. a0555-3/5 drain-to-source v oltage, v ds -- v drain current, i d -- a gate-to-source v oltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) - - ? static drain-to-source on-state resistance, r ds (on) - - ? case temperature, tc - - c drain current, i d -- a forward t ransfer admittance, ? y fs ? - - s diode forward v oltage, v sd -- v source current, i s -- a gate-to-source v oltage, v gs -- v i d -- v ds i d -- v gs r ds (on) - - v gs r ds (on) -- tc i s -- v sd ? y fs ? -- i d drain current, i d -- a switching t ime, sw t ime - - ns sw time - - i d drain-to-source v oltage, v ds -- v ciss, coss, crss - - pf ciss , coss , crss - - v ds it1 1753 it11754 it1 1755 it1 1756 - -50 - -25 0 25 50 75 100 125 150 0 0 30 35 25 20 15 10 30 52 5 15 20 10 5 0 40 30 35 25 20 15 10 5 02 0 18 16 41 2 21 0 68 14 15v 0 1.4 0.4 1.0 0.6 0.2 1.2 0.8 t c=25 c v ds =20v v gs =5v 6v it1 1758 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 5 3 2 7 5 3 2 2 1.0 7 5 3 it1 1757 25 c - -25 c tc = 7 5 c 0.1 23 5 7 2 3 1.0 23 5 5 7 10 1.0 10 2 3 5 7 5 7 3 2 3 v ds =10v t c= -- 25 c 75 c v gs =0v t c= - -25 c 25 c 75 c 3 0 2.0 1.8 1.0 1.4 15 13 59 711 0.6 0.2 1.2 1.6 0.8 0.4 i d =7a tc =75 c 25 c -- 2 5 c i d =7a, v gs =10v sw time - - i d it1 1759 10 100 3 2 2 5 7 1000 3 5 7 0.1 1.0 23 5 23 5 72 10 35 7 v dd =200v v gs =10v t d (of f) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 10000 7 5 3 2 50 52 5 3 5 4 5 15 10 30 40 20 it1 1760 f=1mhz ciss coss crss 8v 25 c 10v
2sK4087LS no. a0555-4/5 pw < 10 s operation in this area is limited by r ds (on). 10 s 100 s 1ms 10m s i dp =52a dc operation 100ms i dc ( * 1)=14a i dpack ( * 2)=9.2a it11730 t otal gate char ge, qg - - nc gate-to-source v oltage, v gs - - v drain-to-source v oltage, v ds -- v drain current, i d - - a ambient t emperature, t a - - c allowable power dissipation, p d - - w case t emperature, t c - - c allowable power dissipation, p d - - w a s o v gs - - qg p d -- t a p d -- tc 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- t a a valanche ener gy derating factor -- % it10478 ambient temperature, ta -- c 2 3 5 7 2 0.1 3 5 7 2 1.0 3 5 7 2 10 3 5 7 2 100 0.01 23 5 7 2 0.1 1.0 35 7 2 10 it1 1762 it1 1761 0 0 20 40 5 10 60 20 15 80 100 120 25 35 30 40 45 140 160 it1 1742 it1 1730 0 0 20 40 1.0 0.5 60 2.0 1.5 80 100 120 2.5 140 160 t c=25 c single pulse 0 0 1 2 3 4 5 6 7 8 50 40 10 9 10 20 30 v ds =200v i d =14a 35 7 2 100 35 7 1k * 1. shows chip capability * 2. sanyo? ideal heat dissipation condition
2sK4087LS no. a0555-5/5 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. note on usage : since the 2sK4087LS is a mosfet product, please avoid using this device in the vicinity of highly char ged objects. this catalog provides information as of april, 2007. specifications and information herein are subject to change without notice.
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